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(8)

• Application of various optical techniques for ESD defect localization.
  F. Essely and F. Darracq and V. Pouget and M. Remmach and Felix Beaudoin and N. Guitard and M. Bafleur and Philippe Perdu and A. Touboul and D. Lewis Microelectronics Reliability 46 1563-1568 (2006)
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• Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
  N. Guitard and F. Essely and D. Trémouilles and M. Bafleur and N. Nolhier and Philippe Perdu and A. Touboul and V. Pouget and D. Lewis Microelectronics Reliability 45 1415-1420 (2005)
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• Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's.
  C. Lochot and J. P. Lainé and M. Bafleur and A. Cazarré and J. Tasselli Microelectronics Journal 37 804-811 (2006)
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• Determination of the ESD Failure Cause Through its Signature.
  M. Zecri and P. Besse and P. Givelin and M. Nayrolles and M. Bafleur and N. Nolhier Microelectronics Reliability 43 1551-1556 (2003)
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• TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology.
  D. Trémouilles and G. Bertrand and M. Bafleur and Felix Beaudoin and Philippe Perdu and N. Guitard and L. Lescouzères Microelectronics Reliability 43 71-79 (2003)
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• Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization.
  T. Beauchêne and D. Lewis and Felix Beaudoin and V. Pouget and Romain Desplats and P. Fouillat and Philippe Perdu and M. Bafleur and D. Trémouilles Microelectronics Reliability 43 439-444 (2003)
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• In the memory of Georges Charitat.
  Marise Bafleur Microelectronics Reliability 42 1153-1154 (2002)
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• Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.
  Romain Desplats and Felix Beaudoin and Philippe Perdu and P. Poirier and D. Trémouilles and M. Bafleur and D. Lewis Microelectronics Reliability 41 1539-1544 (2001)
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