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publications
(6)
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Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design.
Antonis
Papanikolaou
and Miguel
Miranda
and Hua
Wang
and Francky
Catthoor
and M.
Satyakiran
and Pol
Marchal
and Ben
Kaczer
and C.
Bruynseraede
and Zsolt
Tokei
VLSI-SoC
342-347 (2006)
to
dblp
by
dblp
on 2008-08-13 00:00:00
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BibTeX
FinFET and MOSFET preliminary comparison of gate oxide reliability.
R.
Fernández
and R.
Rodríguez
and M.
Nafría
and X.
Aymerich
and B.
Kaczer
and G.
Groeseneken
Microelectronics Reliability
46
1608-1611 (2006)
to
dblp
by
dblp
on 2007-03-27 00:00:00
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BibTeX
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
Robert
O'Connor
and Greg
Hughes
and Robin
Degraeve
and Ben
Kaczer
Microelectronics Reliability
45
869-874 (2005)
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on 2007-03-27 00:00:00
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A new method for the analysis of high-resolution SILC data.
S.
Aresu
and W.
De Ceuninck
and G.
Knuyt
and J.
Mertens
and J.
Manca
and L.
De Schepper
and Robin
Degraeve
and Ben
Kaczer
and M.
D'Olieslaeger
and J.
D'Haen
Microelectronics Reliability
43
1483-1488 (2003)
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on 2007-03-27 00:00:00
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High-resolution SILC measurements of thin SiO2 at ultra low voltages.
S.
Aresu
and W.
De Ceuninck
and R.
Dreesen
and K.
Croes
and E.
Andries
and J.
Manca
and L.
De Schepper
and Robin
Degraeve
and Ben
Kaczer
and M.
D'Olieslaeger
Microelectronics Reliability
42
1485-1489 (2002)
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by
dblp
on 2007-03-27 00:00:00
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Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Ben
Kaczer
and Robin
Degraeve
and M.
Rasras
and A.
De Keersgieter
and K.
Van de Mieroop
and Guido
Groeseneken
Microelectronics Reliability
42
555-564 (2002)
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by
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on 2007-03-27 00:00:00
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