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(6)

• Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale.
  L. Aguilera and M. Porti and M. Nafría and X. Aymerich Microelectronics Reliability 45 1390-1393 (2005)
  to dblp by dblp on 2007-03-27 00:00:00
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• Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.
  M. Porti and S. Meli and M. Nafría and X. Aymerich Microelectronics Reliability 43 1203-1209 (2003)
  to dblp by dblp on 2007-03-25 00:00:00
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• Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
  M. Porti and M. Nafría and X. Aymerich Microelectronics Reliability 43 1501-1505 (2003)
  to dblp by dblp on 2007-03-25 00:00:00
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• Characterising the surface roughness of AFM grown SiO2 on Si.
  D. Hill and X. Blasco and M. Porti and M. Nafría and X. Aymerich Microelectronics Reliability 41 1077-1079 (2001)
  to dblp by dblp on 2007-03-25 00:00:00
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• Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films.
  R. Rodríguez and M. Porti and M. Nafría and X. Aymerich Microelectronics Reliability 41 1011-1013 (2001)
  to dblp by dblp on 2007-03-25 00:00:00
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• Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope.
  M. Porti and X. Blasco and M. Nafría and X. Aymerich and Alexander Olbrich and Bernd Ebersberger Microelectronics Reliability 41 1041-1044 (2001)
  to dblp by dblp on 2007-03-25 00:00:00
  | URL | BibTeX