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publications

(7)

• A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput.
  Hideaki Kurata and Shunichi Saeki and Takashi Kobayashi and Yoshitaka Sasago and Tsuyoshi Arigane and Keiichi Yoshida and Yoshinori Takase and Takayuki Yoshitake and Osamu Tsuchiya and Yoshinori Ikeda and Shunichi Narumi and Michitaro Kanamitsu and Kazuto Izawa and Kazunori Furusawa IEICE Transactions 89-C 1469-1479 (2006)
  to dblp by dblp on 2008-01-24 00:00:00
  | URL | BibTeX  
• A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.
  Hideaki Kurata and Satoshi Noda and Yoshitaka Sasago and Kazuo Otsuga and Tsuyoshi Arigane and Tetsufumi Kawamura and Takashi Kobayashi and Hitoshi Kume and Kazuki Homma and Teruhiko Ito and Yoshinori Sakamoto and Masahiro Shimizu and Yoshinori Ikeda and Osamu Tsuchiya and Kazunori Furusawa IEICE Transactions 90-C 2146-2156 (2007)
  to dblp by dblp on 2008-01-22 00:00:00
  | URL | BibTeX  
• Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories.
  Kazuo Otsuga and Hideaki Kurata and Satoshi Noda and Yoshitaka Sasago and Tsuyoshi Arigane and Tetsufumi Kawamura and Takashi Kobayashi IEICE Transactions 90-C 772-778 (2007)
  to dblp by dblp on 2008-01-22 00:00:00
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• Three-dimensional resist process simulator PEACE (photo and electron beam lithography analyzing computer engineering system).
  Yoshihiko Hirai and Sadafumi Tomida and Kazushi Ikeda and Masaru Sasago and Masayuki Endo and Sigeru Hayama and Noboru Nomura IEEE Trans. on CAD of Integrated Circuits and Systems 10 802-807 (1991)
  to dblp by dblp on 2006-07-11 00:00:00
  | URL | BibTeX  
• Process Modeling for Photoresist Development and Design of DLR/sd (Double-Layer Resist by a Single Development) Process.
  Yoshihiko Hirai and Masaru Sasago and Masayuki Endo and K. Tsuji and Yojiro Mano IEEE Trans. on CAD of Integrated Circuits and Systems 6 403-409 (1987)
  to dblp by dblp on 2006-07-11 00:00:00
  | URL | BibTeX  
• Theoretical calculations of sensitivity of deprotection reactions for acrylic polymers for 193 nm lithography
  N. N. Matsuzawa and T. Ohfuji and K. Kuhara and S. Mori and T. Morisawa and M. Endo and M. Sasago JOURNAL OF MATERIALS CHEMISTRY 8 853--858 (1998)
  to bibtex-import by hlwoodcock on 2006-06-16 05:03:46
  | BibTeX  
• Theoretical calculations of sensitivity of deprotection reactions for acrylic polymers for 193 nm lithography II: Protection groups containing an adamantyl unit
  N. N. Matsuzawa and S. Takechi and T. Ohfuji and K. Kuhara and S. Mori and M. Endo and K. Kamon and T. Morisawa and A. Yamaguchi and M. Sasago JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES \& REVIEW PAPERS 37 5781--5785 (1998)
  to bibtex-import by hlwoodcock on 2006-06-16 05:03:46
  | BibTeX