@article{journals/jssc/InoueMNOSNMIOISKOKY12,
  added-at = {2012-09-18T00:00:00.000+0200},
  author = {Inoue, Hiroki and Matsuzaki, Takanori and Nagatsuka, Shuhei and Okazaki, Yutaka and Sasaki, Toshinari and Noda, Kousei and Matsubayashi, Daisuke and Ishizu, Takahiko and Onuki, Tatsuya and Isobe, Atsuo and Shionoiri, Yutaka and Kato, Kiyoshi and Okuda, Takashi and Koyama, Jun and Yamazaki, Shunpei},
  biburl = {http://www.bibsonomy.org/bibtex/2e63e80950ea4874e649840e22907d06b/dblp},
  ee = {http://dx.doi.org/10.1109/JSSC.2012.2198969},
  interhash = {c19372ad474899f4052d3c3e8a50e558},
  intrahash = {e63e80950ea4874e649840e22907d06b},
  journal = {J. Solid-State Circuits},
  keywords = {dblp},
  number = 9,
  pages = {2258-2265},
  timestamp = {2012-09-18T00:00:00.000+0200},
  title = {Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.},
  url = {http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#InoueMNOSNMIOISKOKY12},
  volume = 47,
  year = 2012
}