%0 Conference Paper %1 conf/asicon/MeiLH0T11 %A Mei, Guanghui %A Li, Peicheng %A Hu, Guangxi %A Liu, Ran %A Tang, Tingao %B ASICON %D 2011 %I IEEE %K dblp %P 555-557 %T Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. %U http://dblp.uni-trier.de/db/conf/asicon/asicon2011.html#MeiLH0T11 %@ 978-1-61284-192-2

@inproceedings{conf/asicon/MeiLH0T11, added-at = {2016-06-22T00:00:00.000+0200}, author = {Mei, Guanghui and Li, Peicheng and Hu, Guangxi and Liu, Ran and Tang, Tingao}, biburl = {https://www.bibsonomy.org/bibtex/2f1bc1f9e9ec82e40a43ecf931f5f7ba3/dblp}, booktitle = {ASICON}, crossref = {conf/asicon/2011}, ee = {http://dx.doi.org/10.1109/ASICON.2011.6157265}, interhash = {02928e24c785ba381ef7a4bed840dfa6}, intrahash = {f1bc1f9e9ec82e40a43ecf931f5f7ba3}, isbn = {978-1-61284-192-2}, keywords = {dblp}, pages = {555-557}, publisher = {IEEE}, timestamp = {2016-06-23T11:39:00.000+0200}, title = {Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.}, url = {http://dblp.uni-trier.de/db/conf/asicon/asicon2011.html#MeiLH0T11}, year = 2011 }