%0 Journal Article %1 Sugino2001 %A Sugino, T. %A Tai, T.i %A Etou, Y. %D 2001 %J Diamond and Related Materials %K Dielectric Fourier Plasma-assisted X-Ray boron chemical constant; deposition; infrared photoelectron previous spectroscopy; term; termnitridenext transform vapor %N 3--7 %P 1375--1379 %T Synthesis of boron nitridenext term film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors %V 10 %X Synthesis of boron previous termnitridenext term (BN) films are attempted by plasma-assisted chemical vapor deposition using previous termBCl3next term and N2 as source gases. BN films are characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements. Capacitance?voltage (C-V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant.

@article{Sugino2001, abstract = {Synthesis of boron previous termnitridenext term (BN) films are attempted by plasma-assisted chemical vapor deposition using previous termBCl3next term and N2 as source gases. BN films are characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements. Capacitance?voltage (C-V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant.}, added-at = {2009-11-05T12:01:24.000+0100}, author = {Sugino, T. and Tai, T.i and Etou, Y.}, biburl = {https://www.bibsonomy.org/bibtex/28937ad0da1589b713e992368aa61345c/ghuot}, institution = {Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan}, interhash = {cda712d3810a862800a170e79aac3cc7}, intrahash = {8937ad0da1589b713e992368aa61345c}, journal = {Diamond and Related Materials}, keywords = {Dielectric Fourier Plasma-assisted X-Ray boron chemical constant; deposition; infrared photoelectron previous spectroscopy; term; termnitridenext transform vapor}, number = {3--7}, owner = {Guillaume}, pages = {1375--1379}, timestamp = {2009-11-05T12:01:35.000+0100}, title = {Synthesis of boron nitridenext term film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors}, volume = 10, year = 2001 }