Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
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%0 Journal Article
%1 journals/mr/LanzaPNAGS09
%A Lanza, Mario
%A Porti, Marc
%A Nafría, Montserrat
%A Aymerich, Xavier
%A Ghidini, G.
%A Sebastiani, A.
%D 2009
%J Microelectron. Reliab.
%K dblp
%N 9-11
%P 1188-1191
%T Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
%U http://dblp.uni-trier.de/db/journals/mr/mr49.html#LanzaPNAGS09
%V 49
@article{journals/mr/LanzaPNAGS09,
added-at = {2020-02-22T00:00:00.000+0100},
author = {Lanza, Mario and Porti, Marc and Nafría, Montserrat and Aymerich, Xavier and Ghidini, G. and Sebastiani, A.},
biburl = {https://www.bibsonomy.org/bibtex/2ab2925882906bcd644e8e8dc71753ab7/dblp},
ee = {https://www.wikidata.org/entity/Q60229119},
interhash = {e7f333094668efdccee4d033a6968985},
intrahash = {ab2925882906bcd644e8e8dc71753ab7},
journal = {Microelectron. Reliab.},
keywords = {dblp},
number = {9-11},
pages = {1188-1191},
timestamp = {2020-02-25T13:30:23.000+0100},
title = {Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr49.html#LanzaPNAGS09},
volume = 49,
year = 2009
}
