Frequency Dependent Characteristics of OGMOSFET
Int. J. on Recent Trends in Engineering and Technology,, 9 (1):
4 (July 2013)Abstract
Miniaturization in length, lowering of power,
increase in package density and sensitivity to light of
MOSFET leads it as the potential candidate for RF application.
As device is expected to operate at RF, it is essential to observe
its frequency dependent characteristics at RF. In this paper
frequency dependent electro optical characteristics of
Optically Gated Metal Oxide Semiconductor Field Effect
Transistor (OGMOSFET) are investigated numerically.
Variation of drain current-voltage characteristics, gate
capacitance and transconductance of OGMOSFET, with
varying frequency, is reported. MOSFET having length of
0.35μm is selected for investigation, which is optically gated
with incident radiations of optical power of 0.25mW and
wavelength of 800nm. MATLAB is used as computational
platform to test and tune the results. Results show that
increase in modulating frequency of OGMOSFET decreases
drain current, gate capacitance, transconductance and output
conductance. This is due to decrease in life time of inversion
charges at very high frequencies. Operating bandwidth of the
device is up to 4GHz.