BibSonomy :: publication :: Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.

Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, Yutaka Okazaki, Toshinari Sasaki, Kousei Noda, Daisuke Matsubayashi, Takahiko Ishizu, Tatsuya Onuki, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Jun Koyama, and Shunpei Yamazaki. J. Solid-State Circuits 47(9):2258-2265 (2012)

@article{journals/jssc/InoueMNOSNMIOISKOKY12,
  added-at = {2012-09-18T00:00:00.000+0200},
  author = {Inoue, Hiroki and Matsuzaki, Takanori and Nagatsuka, Shuhei and Okazaki, Yutaka and Sasaki, Toshinari and Noda, Kousei and Matsubayashi, Daisuke and Ishizu, Takahiko and Onuki, Tatsuya and Isobe, Atsuo and Shionoiri, Yutaka and Kato, Kiyoshi and Okuda, Takashi and Koyama, Jun and Yamazaki, Shunpei},
  biburl = {http://www.bibsonomy.org/bibtex/2e63e80950ea4874e649840e22907d06b/dblp},
  ee = {http://dx.doi.org/10.1109/JSSC.2012.2198969},
  interhash = {c19372ad474899f4052d3c3e8a50e558},
  intrahash = {e63e80950ea4874e649840e22907d06b},
  journal = {J. Solid-State Circuits},
  keywords = {dblp},
  number = 9,
  pages = {2258-2265},
  timestamp = {2012-09-18T00:00:00.000+0200},
  title = {Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.},
  url = {http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#InoueMNOSNMIOISKOKY12},
  volume = 47,
  year = 2012
}

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BibTeX key:	journals/jssc/InoueMNOSNMIOISKOKY12

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Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.

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