%0 Conference Paper %1 conf/newcas/WangHHH17 %A Wang, Liao %A Hirokawa, Soichi %A Harada, Ryo %A Hashimoto, Masanori %B NEWCAS %D 2017 %I IEEE %K dblp %P 33-36 %T Contributions of SRAM, FF and combinational circuit to chip-level neutron-induced soft error rate: - Bulk vs. FD-SOI at 0.5 and 1.0V -. %U http://dblp.uni-trier.de/db/conf/newcas/newcas2017.html#WangHHH17 %@ 978-1-5090-4991-2

@inproceedings{conf/newcas/WangHHH17, added-at = {2022-01-03T00:00:00.000+0100}, author = {Wang, Liao and Hirokawa, Soichi and Harada, Ryo and Hashimoto, Masanori}, biburl = {https://www.bibsonomy.org/bibtex/2ec4ed811ee11b81e9d0c21c9c3001efe/dblp}, booktitle = {NEWCAS}, crossref = {conf/newcas/2017}, ee = {https://doi.org/10.1109/NEWCAS.2017.8010098}, interhash = {a8e33611ee01442c80b162fc29a5a832}, intrahash = {ec4ed811ee11b81e9d0c21c9c3001efe}, isbn = {978-1-5090-4991-2}, keywords = {dblp}, pages = {33-36}, publisher = {IEEE}, timestamp = {2024-04-10T08:54:47.000+0200}, title = {Contributions of SRAM, FF and combinational circuit to chip-level neutron-induced soft error rate: - Bulk vs. FD-SOI at 0.5 and 1.0V -.}, url = {http://dblp.uni-trier.de/db/conf/newcas/newcas2017.html#WangHHH17}, year = 2017 }