%0 Journal Article %1 noauthororeditor %A Pankratov, E L %A Bulaeva, E A %D 2016 %J International Journal of Applied Control, Electrical and Electronics Engineering %K Implanted-junction dopant modification of profile rectifiers %N 1 %P 15 %R 10.5121 %T INFLUENCE OF TEMPERATURE OF ION IMPLANTATION ON DISTRIBUTION OF CONCENTRATION OF DOPANT IN AN IMPLANTED-JUNCTION RECTIFIERS %U http://airccse.com/ijaceee/papers/4116ijaceee01.pdf %V 4 %X In this paper we present analysis manufacturing an implanted-junction rectifier in heterostructures. We analyzed dependence of distribution of concentration of dopant in the rectifier on temperature of doping.We obtain, that increasing of temperature of doping leads to increasing of spreading of distribution of concentration of dopant and at the same time to decreasing of quantity of radiation defects. It has been shown,that variation of the temperature of heterostructure during the ion implantation gives a possibility to accelerate the technological process

@article{noauthororeditor, abstract = {In this paper we present analysis manufacturing an implanted-junction rectifier in heterostructures. We analyzed dependence of distribution of concentration of dopant in the rectifier on temperature of doping.We obtain, that increasing of temperature of doping leads to increasing of spreading of distribution of concentration of dopant and at the same time to decreasing of quantity of radiation defects. It has been shown,that variation of the temperature of heterostructure during the ion implantation gives a possibility to accelerate the technological process }, added-at = {2017-09-27T07:22:03.000+0200}, author = {Pankratov, E L and Bulaeva, E A}, biburl = {https://www.bibsonomy.org/bibtex/2245cf5c2506c851950969262c90fcfa0/jacksonrude}, doi = {10.5121}, interhash = {401ff4e0fa59939f6ae525ef84d77005}, intrahash = {245cf5c2506c851950969262c90fcfa0}, issn = {ISSN : 2394 - 0816}, journal = {International Journal of Applied Control, Electrical and Electronics Engineering }, keywords = {Implanted-junction dopant modification of profile rectifiers}, language = {English}, month = feb, number = 1, pages = 15, timestamp = {2017-09-27T07:22:03.000+0200}, title = {INFLUENCE OF TEMPERATURE OF ION IMPLANTATION ON DISTRIBUTION OF CONCENTRATION OF DOPANT IN AN IMPLANTED-JUNCTION RECTIFIERS}, url = {http://airccse.com/ijaceee/papers/4116ijaceee01.pdf}, volume = 4, year = 2016 }