%0 Journal Article %1 Kim2011200 %A il Kim, Sang %A Kim, Bumjoon %A Jang, Samseok %A young Kim, A %A Park, Jihun %A Byun, Dongjin %D 2011 %J Journal of Crystal Growth %K aempl %N 1 %P 200 - 204 %R http://dx.doi.org/10.1016/j.jcrysgro.2011.01.097 %T Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask %U http://www.sciencedirect.com/science/article/pii/S0022024811001485 %V 326 %X Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The \PR\ masks for the \ELO\ process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned \PR\ was annealed at 1000 °C in a \H2\ atmosphere. The stripes were aligned parallel to the 1 1 − 2 0 Al 2 O 3 direction. The \ELO\ process of GaN was strongly dependent on the direction of the stripes. Overall, the \PR\ masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized \PR\ mask acted as an \ELO\ mask. The study results confirmed the promising potential of the \ELO\ process using an in-situ carbonized \PR\ mask as a single-step technique.

@article{Kim2011200, abstract = {Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The \{PR\} masks for the \{ELO\} process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned \{PR\} was annealed at 1000 °C in a \{H2\} atmosphere. The stripes were aligned parallel to the [ 1 1 − 2 0 ] Al 2 O 3 direction. The \{ELO\} process of GaN was strongly dependent on the direction of the stripes. Overall, the \{PR\} masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized \{PR\} mask acted as an \{ELO\} mask. The study results confirmed the promising potential of the \{ELO\} process using an in-situ carbonized \{PR\} mask as a single-step technique. }, added-at = {2015-10-08T06:13:03.000+0200}, author = {il Kim, Sang and Kim, Bumjoon and Jang, Samseok and young Kim, A and Park, Jihun and Byun, Dongjin}, biburl = {https://www.bibsonomy.org/bibtex/2d4b97657decc8c7d409cb82ebf204c7a/l1th1um}, description = {Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask}, doi = {http://dx.doi.org/10.1016/j.jcrysgro.2011.01.097}, interhash = {905bf472d00fbcd74bc52a21818d7edc}, intrahash = {d4b97657decc8c7d409cb82ebf204c7a}, issn = {0022-0248}, journal = {Journal of Crystal Growth }, keywords = {aempl}, note = {Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond)Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM_Korea 2010)Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond) }, number = 1, pages = {200 - 204}, timestamp = {2015-10-08T06:13:03.000+0200}, title = {Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask }, url = {http://www.sciencedirect.com/science/article/pii/S0022024811001485}, volume = 326, year = 2011 }