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%0 Journal Article
%1 journals/iet-cds/VescoliPEKRMS08
%A Vescoli, Verena
%A Park, Jong Mun
%A Enichlmair, Hubert
%A Knaipp, Martin
%A Röhrer, Georg
%A Minixhofer, Rainer
%A Schrems, Martin
%D 2008
%J IET Circuits Devices Syst.
%K dblp
%N 3
%P 347-353
%T Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.
%U http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds2.html#VescoliPEKRMS08
%V 2
@article{journals/iet-cds/VescoliPEKRMS08,
added-at = {2020-09-10T00:00:00.000+0200},
author = {Vescoli, Verena and Park, Jong Mun and Enichlmair, Hubert and Knaipp, Martin and Röhrer, Georg and Minixhofer, Rainer and Schrems, Martin},
biburl = {https://www.bibsonomy.org/bibtex/295bd573996ff87e00876af0200fa3779/dblp},
ee = {https://doi.org/10.1049/iet-cds:20060374},
interhash = {d3fd99f5a2dd92d5270cbf74f79aff06},
intrahash = {95bd573996ff87e00876af0200fa3779},
journal = {IET Circuits Devices Syst.},
keywords = {dblp},
number = 3,
pages = {347-353},
timestamp = {2020-09-11T11:44:35.000+0200},
title = {Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.},
url = {http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds2.html#VescoliPEKRMS08},
volume = 2,
year = 2008
}
