%0 Conference Paper %1 conf/isscc/MatsuzakiONIIIY15 %A Matsuzaki, Takanori %A Onuki, Tatsuya %A Nagatsuka, Shuhei %A Inoue, Hiroki %A Ishizu, Takahiko %A Ieda, Yoshinori %A Yamade, Naoto %A Miyairi, Hidekazu %A Sakakura, Masayuki %A Atsumi, Tomoaki %A Shionoiri, Yutaka %A Kato, Kiyoshi %A Okuda, Takashi %A Yamamoto, Yoshitaka %A Fujita, Masahiro %A Koyama, Jun %A Yamazaki, Shunpei %B ISSCC %D 2015 %I IEEE %K dblp %P 1-3 %T 16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. %U http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#MatsuzakiONIIIY15 %@ 978-1-4799-6224-2

@inproceedings{conf/isscc/MatsuzakiONIIIY15, added-at = {2015-03-24T00:00:00.000+0100}, author = {Matsuzaki, Takanori and Onuki, Tatsuya and Nagatsuka, Shuhei and Inoue, Hiroki and Ishizu, Takahiko and Ieda, Yoshinori and Yamade, Naoto and Miyairi, Hidekazu and Sakakura, Masayuki and Atsumi, Tomoaki and Shionoiri, Yutaka and Kato, Kiyoshi and Okuda, Takashi and Yamamoto, Yoshitaka and Fujita, Masahiro and Koyama, Jun and Yamazaki, Shunpei}, biburl = {https://www.bibsonomy.org/bibtex/214a53cf991921193ea9eda17cd1758c4/dblp}, booktitle = {ISSCC}, crossref = {conf/isscc/2015}, ee = {http://dx.doi.org/10.1109/ISSCC.2015.7063048}, interhash = {ff63b7699ebd235c97c6f58b21459cef}, intrahash = {14a53cf991921193ea9eda17cd1758c4}, isbn = {978-1-4799-6224-2}, keywords = {dblp}, pages = {1-3}, publisher = {IEEE}, timestamp = {2015-06-18T16:09:38.000+0200}, title = {16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method.}, url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#MatsuzakiONIIIY15}, year = 2015 }