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A Single-Chip 8-Band CMOS Transceiver for 3G Cellular Systems with Digital Interface., , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 93-A (2): 375-381 (2010)A Study of Striped Inductor for K- and Ka-Band Voltage-Controlled Oscillators., , , , , and . IEICE Trans. Electron., 99-C (6): 614-622 (2016)A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise., , , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 95-A (2): 487-497 (2012)A Fully Integrated 2 ˟ 1 Dual-Band Direct-Conversion Mobile WiMAX Transceiver With Dual-Mode Fractional Divider and Noise-Shaping Transimpedance Amplifier in 65 nm CMOS., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 45 (12): 2774-2784 (2010)A quadrature voltage-controlled oscillator using phase-adjusting architecture for suppressing phase noise., , and . IEICE Electron. Express, 18 (10): 20210173 (2021)Study of dual-band concurrent LNA equipping mutual inductive notch filter matching circuit., , , and . IEICE Electron. Express, 18 (5): 20210046 (2021)Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input., , , and . IEICE Electron. Express, 20 (13): 20230107 (2023)High Sensitivity 900-MHz ISM Band Transceiver., , , , , , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 88-A (2): 498-506 (2005)A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation., , , , , , , , , and 7 other author(s). IEICE Trans. Electron., 93-C (6): 803-811 (2010)A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS., , , , , and . IEICE Trans. Electron., 90-C (9): 1721-1728 (2007)