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A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band., , , and . IEEE J. Solid State Circuits, 38 (7): 1279-1283 (2003)Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications., , , , , , , and . IRPS, page 4. IEEE, (2022)Self-Contained Power Amplifier for 5G., , and . NEWCAS, page 222-225. IEEE, (2020)20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13µm technology., , and . ISCAS (3), page 2675-2678. IEEE, (2005)A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS., , , , and . ISSCC, page 428-429. IEEE, (2010)A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS., , and . LASCAS, page 1-4. IEEE, (2017)A 1.2V 20 dBm 60 GHz power amplifier with 32.4 dB Gain and 20 % Peak PAE in 65nm CMOS., , , , and . ESSCIRC, page 175-178. IEEE, (2014)A Fully Digital 65nm CMOS Transmitter for the 2.4-to-2.7GHz WiFi/WiMAX Bands using 5.4GHz ΔΣ RF DACs., , , , , and . ISSCC, page 360-361. IEEE, (2008)0.18μm thin oxide CMOS transceiver front-end with integrated Tx/Rx commutator for low cost Bluetooth solutions., and . ESSCIRC, page 675-678. IEEE, (2003)Activity profiling: Review of different solutions to develop reliable and performant design., , , , , , , , , and . IOLTS, page 47-50. IEEE, (2016)