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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

I. Hirano, Y. Nakasaki, S. Fukatsu, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine, Y. Mitani, and K. Yamabe. Microelectron. Reliab., 53 (12): 1868-1874 (2013)

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Yuichiro Honda

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Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation.H. Seki, Y. Nakasaki, and Y. Mitani. IRPS, page 1-7. IEEE, (2020)Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.Y. Higashi, R. Takaishi, K. Kato, M. Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, S. Ogura, K. Fukutani and 1 other author(s). Microelectron. Reliab., (2017)Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.I. Hirano, Y. Nakasaki, S. Fukatsu, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine, Y. Mitani, and K. Yamabe. Microelectron. Reliab., 53 (12): 1868-1874 (2013)Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits.M. Suzuki, A. Kinoshita, and Y. Mitani. ICICDT, page 195-198. IEEE, (2013)Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation.T. Marukame, K. Ueyoshi, T. Asai, M. Motomura, A. Schmid, M. Suzuki, Y. Higashi, and Y. Mitani. IEEE Trans. Circuits Syst. II Express Briefs, 64-II (4): 462-466 (2017)Study on mechanism of thermal curing in ultra-thin gate dielectrics.Y. Mitani, Y. Higashi, and Y. Nakasaki. IRPS, page 3. IEEE, (2018)Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology.T. Tanamoto, S. Takaya, N. Sakamoto, H. Kasho, S. Yasuda, T. Marukame, S. Fujita, and Y. Mitani. CoRR, (2017)Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component.Y. Mitani, S. Fukatsu, D. Hagishima, and K. Matsuzawa. ICICDT, page 1-4. IEEE, (2012)Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing.Y. Mitani, and K. Matsuzawa. ICICDT, page 1-4. IEEE, (2015)

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Disambiguation of "Mitani, Yuichiro"

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

Please choose a person to relate this publication to

Yuichiro Honda

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Mitani, Yuichiro"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

Please choose a person to relate this publication to

Yuichiro Honda

Other publications of authors with the same name

Disambiguation

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.