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Long-term degradation mechanisms of mid-power LEDs for lighting applications.

, , , , , and . Microelectron. Reliab., 55 (9-10): 1754-1758 (2015)

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Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)Positive and negative threshold voltage instabilities in GaN-based transistors., , , , and . Microelectron. Reliab., (2018)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , and . IECON, page 1-6. IEEE, (2021)Degradation of vertical GaN FETs under gate and drain stress., , , , , , and . IRPS, page 4. IEEE, (2018)Long-term degradation mechanisms of mid-power LEDs for lighting applications., , , , , and . Microelectron. Reliab., 55 (9-10): 1754-1758 (2015)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)Degradation of GaN-on-GaN vertical diodes submitted to high current stress., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)Degradation of InGaN-based LEDs related to charge diffusion and build-up., , , , and . Microelectron. Reliab., (2016)