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Threshold-voltage variability analysis and modeling for junctionless double-gate transistors.

, , and . Microelectron. Reliab., (2017)

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Design issues and insights of multi-fin bulk silicon FinFETs., and . ISQED, page 723-726. IEEE, (2012)MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization., , , , , , , , , and 3 other author(s). ESSDERC, page 9-12. IEEE, (2023)6-T SRAM performance assessment with stacked silicon nanowire MOSFETs., , , and . ISQED, page 610-614. IEEE, (2015)Speed Optimization of Vertically Stacked Gate-All-Around MOSFETs with Inner Spacers for Low Power and Ultra-Low Power Applications., , and . ISQED, page 231-234. IEEE, (2019)Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM., , , , and . ISQED, page 151-155. IEEE, (2018)Assessment of structure variation in silicon nanowire FETs and impact on SRAM., , , and . Microelectron. J., 43 (5): 300-304 (2012)Low power design of phase-change memory based on a comprehensive model., , , , , , , , , and 2 other author(s). IET Comput. Digit. Tech., 4 (4): 285-292 (2010)How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology., , , , , , , , , and 19 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Back-Bias Modulated UTBB SOI for System-on-Chip I/O Cells., , and . ISQED, page 311. IEEE, (2021)An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires., , , and . ICICDT, page 117-120. IEEE, (2018)