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Frequency modulation of conductance level in PCM device for neuromorphic applications., , , , , , , , , and . ESSCIRC, page 129-132. IEEE, (2022)Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis., , , , and . Microelectron. Reliab., (2017)Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning., , , , , , , , and . IRPS, page 1-4. IEEE, (2019)Electrical characterization and modeling of resistance switching nio-based random accss memories.. Polytechnic University of Milan, Italy, (2010)Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications., , , , , , , , , and 2 other author(s). IRPS, page 2-1. IEEE, (2018)On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories., , , , , , , , , and 4 other author(s). ESSDERC, page 278-281. IEEE, (2012)Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization., , , , , , , , , and 6 other author(s). ESSDERC, page 266-269. IEEE, (2015)