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Interband RTDs with Nanoelectronic HBT-LED Structures for Multiple-Valued Computation.

, and . ISMVL, page 80-85. IEEE Computer Society, (1996)

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Interband RTDs with Nanoelectronic HBT-LED Structures for Multiple-Valued Computation., and . ISMVL, page 80-85. IEEE Computer Society, (1996)Reliability investigations on HBV using pulsed electrical stress., , , , and . Microelectron. Reliab., 42 (9-11): 1563-1568 (2002)Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress., , , , and . Microelectron. Reliab., 43 (9-11): 1929-1933 (2003)Bit Error Probability in the Presence of Passive Intermodulation., and . IEEE Communications Letters, 16 (8): 1145-1148 (2012)A novel system for systematic microwave noise and DC characterization of terahertz Schottky diodes., , , , , , and . IEEE Trans. Instrumentation and Measurement, 53 (2): 581-587 (2004)Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning., , , and . Microelectron. Reliab., 45 (9-11): 1600-1604 (2005)Process Control and Failure Analysis Implementation for THz Schottky-based components., , , , , , and . Microelectron. Reliab., 42 (9-11): 1593-1596 (2002)Interband-Tunneling III-V Semiconductor Structures for Multiple-Valued Literal and Arithmetic Functions., , , , and . ISMVL, page 198-206. IEEE Computer Society, (1994)Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT., , , , , , , , , and . Microelectron. Reliab., 41 (9-10): 1567-1571 (2001)Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements., , , , , , , and . IEICE Trans. Electron., 91-C (7): 1058-1062 (2008)