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UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems., , , , , , , , , and 9 other author(s). IEEE J. Solid State Circuits, 43 (1): 292-299 (2008)A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs., , , , , , , , , and 1 other author(s). VLSI Circuits, page 48-. IEEE, (2019)A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor., , , , , , , , , and 8 other author(s). VLSIC, page 1-2. IEEE, (2014)Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating., , , , , , , , , and 14 other author(s). COOL Chips, page 1-3. IEEE Computer Society, (2014)UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems., , , , , , , , , and 9 other author(s). ISSCC, page 574-575. IEEE, (2007)Processor with 4.9-μs break-even time in power gating using crystalline In-Ga-Zn-oxide transistor., , , , , , , , , and 4 other author(s). COOL Chips, page 1-3. IEEE Computer Society, (2013)A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors., , , , , , , , , and 2 other author(s). ISSCC, page 484-486. IEEE, (2018)16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method., , , , , , , , , and 7 other author(s). ISSCC, page 1-3. IEEE, (2015)