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Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling., , , , , , , , and . ISCAS, page 2249-2252. IEEE, (2011)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)The properties, effect and extraction of localized defect profiles from degraded FET characteristics., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2021)A BSIM-Based Predictive Hot-Carrier Aging Compact Model., , , , , , , , , and . IRPS, page 1-9. IEEE, (2021)BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic., , , , , , and . Microelectron. Reliab., 52 (9-10): 1932-1935 (2012)Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements., , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 59-II (7): 439-442 (2012)A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs., , , , , , , and . ESSDERC, page 428-431. IEEE, (2016)Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors., , , , , , , and . OFC, page 1-3. IEEE, (2022)