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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

X. Han, Q. Jia, H. Sun, L. Wang, H. Wu, Y. Cai, F. Zhang, Y. Xie, F. Dong, X. Wang, X. Xue, L. Pang, X. Zhao, M. Wu, P. Bai, Q. Liu, H. Lv, B. Yu, C. Zhao, H. Qian, R. Huang, M. Liu, Y. Zhou, N. Zheng, and Q. Ren. CICC, page 1-4. IEEE, (2017)

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Ivan Lvov

Zhiyi Lv

Guohua Lv

Zuopeng LV

Li-Ping Lv

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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.X. Han, Q. Jia, H. Sun, L. Wang, H. Wu, Y. Cai, F. Zhang, Y. Xie, F. Dong, X. Wang and 15 other author(s). CICC, page 1-4. IEEE, (2017)A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.J. Yang, Q. Luo, X. Xue, H. Jiang, Q. Wu, Z. Han, Y. Cao, Y. Han, C. Dou, H. Lv and 2 other author(s). ISSCC, page 498-499. IEEE, (2023)A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme.C. Liu, J. Yang, P. Jiang, Q. Wang, D. Zhang, T. Gong, Q. Ding, Y. Zhao, Q. Luo, X. Xue and 2 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 28 (11): 2469-2473 (2020)Ion-Gated Transistor: An Enabler for Sensing and Computing Integration.X. Bu, H. Xu, D. Shang, Y. Li, H. Lv, and Q. Liu. Adv. Intell. Syst., 2 (12): 2000156 (2020)High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications.K. Zhou, X. Xue, J. Yang, X. Xu, H. Lv, M. e Jing, J. Li, X. Zeng, and M. Liu. IEEE J. Solid State Circuits, 56 (3): 988-1000 (2021)A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.Q. Wu, Y. Cao, Q. Luo, H. Jiang, Z. Han, Y. Han, C. Dou, H. Lv, Q. Liu, J. Yang and 1 other author(s). IEEE J. Solid State Circuits, 59 (1): 208-218 (January 2024)Resistive Switching Devices: Mechanism, Performance and Integration.M. Liu, Q. Liu, H. Lv, and S. Long. Handbook of Memristor Networks, Springer, (2019)A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications.J. Yang, X. Li, Q. Ding, X. Xue, X. Xu, Q. Luo, H. Lv, and M. Liu. ASICON, page 1-4. IEEE, (2019)A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.J. Yang, R. Lin, K. Zhou, Y. Zhang, X. Xue, and H. Lv. Microelectron. J., (2022)Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications.Q. Ding, T. Gong, J. Yu, X. Xu, X. Li, H. Lv, J. Yang, Q. Luo, P. Yuan, F. Zhang and 1 other author(s). Sci. China Inf. Sci., (2021)

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Disambiguation of "Lv, Hangbing"

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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

Please choose a person to relate this publication to

Ivan Lvov

Zhiyi Lv

Guohua Lv

Zuopeng LV

Li-Ping Lv

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Lv, Hangbing"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

Please choose a person to relate this publication to

Ivan Lvov

Zhiyi Lv

Guohua Lv

Zuopeng LV

Li-Ping Lv

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.