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A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications.

T. Song, W. Rim, J. Jung, G. Yang, J. Park, S. Park, Y. Kim, K. Baek, S. Baek, S. Oh, J. Jung, S. Kim, G. Kim, J. Kim, Y. Lee, S. Sim, J. Yoon, K. Choi, H. Won, and J. Park. J. Solid-State Circuits, 50 (1): 158-169 (2015)

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Sung-Gyu Kim

Yun-Gyu Kim

Du Gyu Kim

Gyu Chang Kim

Seong-Gyu Kim

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13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications.T. Song, W. Rim, J. Jung, G. Yang, J. Park, S. Park, K. Baek, S. Baek, S. Oh, J. Jung and 8 other author(s). ISSCC, page 232-233. IEEE, (2014)Pseudo NMOS based sense amplifier for high speed single-ended SRAM.H. Jeong, T. Kim, S. Jung, T. Song, and G. Kim. ICECS, page 331-334. IEEE, (2014)Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM.H. Jeong, J. Park, T. Oh, W. Rim, T. Song, G. Kim, H. Won, and S. Jung. IEEE Trans. Circuits Syst. II Express Briefs, 63-II (11): 1059-1063 (2016)A 130-nm 0.9-V 66-MHz 8-Mb (256K × 32) local SONOS embedded flash EEPROM.M. Seo, S. Sim, M. Oh, H. Lee, S. Kim, I. Cho, G. Kim, and M. Kim. IEEE J. Solid State Circuits, 40 (4): 877-883 (2005)Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM.H. Jeong, T. Kim, K. Kang, T. Song, G. Kim, H. Won, and S. Jung. IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (6): 1555-1563 (2015)Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM.H. Jeong, T. Kim, Y. Yang, T. Song, G. Kim, H. Won, and S. Jung. IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (4): 1062-1070 (2015)Design of poly-Si TFT-LCD panel with integrated driver circuits for an HDTV/XGA projection system.B. Choi, H. Jang, O. Kwon, H. Kim, and M. Soh. IEEE Trans. Consumer Electronics, 46 (1): 95-104 (2000)Robust via-programmable ROM design based on 45nm process considering process variation and enhancement Vmin and yield.B. Jang, C. Lee, S. Sim, K. Choi, D. Byun, Y. Jung, K. Park, D. Heo, G. Kim, and J. Yang. ISCAS, page 2541-2544. IEEE, (2015)Trip-Point Bit-Line Precharge Sensing Scheme for Single-Ended SRAM.H. Jeong, T. Kim, T. Song, G. Kim, and S. Jung. IEEE Trans. Very Large Scale Integr. Syst., 23 (7): 1370-1374 (2015)

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Disambiguation of "Kim, Gyu-Hong"

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A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications.

Please choose a person to relate this publication to

Sung-Gyu Kim

Yun-Gyu Kim

Du Gyu Kim

Gyu Chang Kim

Seong-Gyu Kim

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Kim, Gyu-Hong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications.

Please choose a person to relate this publication to

Sung-Gyu Kim

Yun-Gyu Kim

Du Gyu Kim

Gyu Chang Kim

Seong-Gyu Kim

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
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A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications.