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A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters.

, , , , , , , and . VLSI Circuits, page 1-2. IEEE, (2016)

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A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters., , , , , , , and . VLSI Circuits, page 1-2. IEEE, (2016)A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices., , , , , , , and . ISSCC, page 404-406. IEEE, (2012)Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)., , and . IRPS, page 1-4. IEEE, (2019)Current status on GaN-based RF-power devices., , and . ESSCIRC, page 61-66. IEEE, (2011)Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)., , , , , , , , and . Microelectron. Reliab., (2016)Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations., , , , , , , , , and . IRPS, page 4. IEEE, (2018)K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W., , , , , , , and . IEICE Trans. Electron., 95-C (8): 1327-1331 (2012)Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique., , , , , and . IEICE Electron. Express, 4 (24): 775-781 (2007)Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide., , , , , and . IEICE Trans. Electron., 91-C (7): 1001-1003 (2008)Conducted noise of GaN Schottky barrier diode in a DC-DC converter., , , , and . IEICE Electron. Express, 12 (24): 20150912 (2015)