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Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , and 9 other author(s). ESSDERC, page 286-289. IEEE, (2012)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors., , , , , and . Microelectron. Reliab., (2018)Physically-based extraction methodology for accurate MOSFET degradation assessment., , , , , , and . Microelectron. Reliab., 55 (9-10): 1417-1421 (2015)Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K., , , , , , , and . Microelectron. Reliab., (2017)On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes., , , , , , , , , and . ESSDERC, page 126-129. IEEE, (2017)Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs., , , , , , and . ESSDERC, page 300-303. IEEE, (2013)Analog performance of strained SOI nanowires down to 10K., , , , , , and . ESSDERC, page 222-225. IEEE, (2016)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)