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Disambiguation of "Ghibaudo, Gérard"

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Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.

, , , , , , , and . Microelectron. Reliab., 45 (5-6): 925-928 (2005)

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Walter Gérard

Gérard Gäfgen

Gérard Sprüssel

Bruno Gérard

Emilie Gérard

 

Other publications of authors with the same name

Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI., , , , , , , and . ISCAS, page 1452-1455. IEEE, (2013)Guest Editorial., and . Microelectron. Reliab., 43 (8): 1173 (2003)Accurate determination of flat band voltage in advanced MOS structure., , and . Microelectron. Reliab., 47 (4-5): 660-664 (2007)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , and . ICECS, page 953-956. IEEE, (2012)Origin of hot carrier degradation in advanced nMOSFET devices., , , and . Microelectron. Reliab., 42 (9-11): 1405-1408 (2002)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , and . ESSDERC, page 166-169. IEEE, (2018)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)