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LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology.

, , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 58-II (8): 467-471 (2011)

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LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology., , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 58-II (8): 467-471 (2011)Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs., , , and . NORCAS, page 1-4. IEEE, (2015)Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique., , , , , , and . I. J. Circuit Theory and Applications, 43 (6): 709-721 (2015)Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET., , , , , , and . ISCAS, page 2701-2704. IEEE, (2008)13.2 A digital multimode polar transmitter supporting 40MHz LTE Carrier Aggregation in 28nm CMOS., , , , , , , , , and 13 other author(s). ISSCC, page 218-219. IEEE, (2017)Self-aligned open-loop local quadrature phase generator., , and . ESSCIRC, page 351-354. IEEE, (2016)Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices., , , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 56-I (5): 920-932 (2009)A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner., , , , and . ICECS, page 21-24. IEEE, (2018)13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE., , , , , and . ISSCC, page 232-233. IEEE, (2017)