Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs., , , , , , , , and . IRPS, page 6. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)GaN-based HEMTs tested under high temperature storage test., , , , , , , and . Microelectron. Reliab., 51 (9-11): 1717-1720 (2011)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges., , , , and . CICC, page 679-686. IEEE, (2006)Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level., , , , , , , , , and . Microelectron. Reliab., (2017)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate., , , , , , , , , and . Microelectron. Reliab., (2016)A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor., , , , , , , , , and 3 other author(s). CICC, page 701-704. IEEE, (2004)Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors., , , , , , , , and . CICC, page 497-500. IEEE, (2005)FinFET technology for analog and RF circuits., , , , , , , and . ICECS, page 182-185. IEEE, (2007)