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Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.

, , , , , and . IBM Journal of Research and Development, 50 (4-5): 363-376 (2006)

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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles: principles of operation, fabrication, measurements, and analysis.. Massachusetts Institute of Technology, Cambridge, MA, USA, (2009)ndltd.org (oai:dspace.mit.edu:1721.1/47785).