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Disambiguation of "Heyns, Marc M."

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Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

, , , , , , , , , , , , , , , and . ICICDT, page 1-4. IEEE, (2012)

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Wolfgang Heyns

Kurt Heyns

Karl Heyns

Harald Heyns

Manuela Heyns

 

Other publications of authors with the same name

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements., , , , , , , , , and . VLSI Technology and Circuits, page 340-342. IEEE, (2022)Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling., , , , and . Microelectron. Reliab., 47 (6): 880-889 (2007)Cost-effective cleaning and high-quality thin gate oxides., , , , , , , , , and 8 other author(s). IBM J. Res. Dev., 43 (3): 339-350 (1999)Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance., , , , , , and . Microelectron. Reliab., 45 (5-6): 794-797 (2005)Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing., , , , , , , , , and 3 other author(s). CoRR, (2019)In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction., , , , , , , , , and . Microelectron. Reliab., 41 (7): 995-998 (2001)Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective., , , , , , and . ESSCIRC, page 55-58. IEEE, (2016)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , and 2 other author(s). IRPS, page 5. IEEE, (2015)Material selection and device design guidelines for two-dimensional materials based TFETs., , , , , , and . ESSDERC, page 54-57. IEEE, (2017)