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Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique.

, , , , and . Microelectron. Reliab., 51 (6): 1127-1135 (2011)

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Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique., , , , and . Microelectron. Reliab., 51 (6): 1127-1135 (2011)A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices., , , , and . Microelectron. Reliab., 51 (9-11): 1824-1829 (2011)Estimation of SiC JFET temperature during short-circuit operations., , , , , , and . Microelectron. Reliab., 49 (9-11): 1358-1362 (2009)Mechanisms of power module source metal degradation during electro-thermal aging., , , , , and . Microelectron. Reliab., (2017)Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application., , , , , and . Microelectron. Reliab., 52 (9-10): 1859-1864 (2012)SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation., , , and . Math. Comput. Simul., (2019)Boundary element analysis of thermal fatigue effects on high power IGBT modules., and . Microelectron. Reliab., 44 (6): 929-938 (2004)Characterisation of power modules ceramic substrates for reliability aspects., , , , and . Microelectron. Reliab., 49 (9-11): 1260-1266 (2009)Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition., , , , , , and . Microelectron. Reliab., 51 (2): 386-391 (2011)Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices., , and . Microelectron. Reliab., 47 (2-3): 422-428 (2007)