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25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS.

, , and . ISSCC, page 424-425. IEEE, (2016)

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Subclasses of Self-Modifying Nets.. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, volume 52 of Informatik-Fachberichte, page 187-192. Springer, (1981)Recombination current measurements in the space charge region of MOS field-induced pn junctions., and . Microelectron. Reliab., 41 (6): 789-795 (2001)A Terahertz Detector Array in a SiGe HBT Technology., , , and . IEEE J. Solid State Circuits, 48 (9): 2002-2010 (2013)Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology., , , , , , , , , and 15 other author(s). OFC, page 1-3. IEEE, (2014)Comments on I. Futo, T. Gergely.. International Working Conference on Model Realism, page 47-48. Springer, (1982)SiGe BiCMOS technology for mm-wave systems., and . ISOCC, page 266-268. IEEE, (2012)Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz., , , , and . NANOCOM, page 25:1-25:2. ACM, (2017)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , and . ISSCC, page 418-420. IEEE, (2018)A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging., , , , , , , , and . IEEE J. Solid State Circuits, 53 (12): 3599-3612 (2018)A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology., , , , and . RWS, page 146-149. IEEE, (2018)