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A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology.

, , , , , , , , and . ESSCIRC, page 487-490. IEEE, (2016)

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23.5 A dual 64Gbaud 10kΩ 5% THD linear differential transimpedance amplifier with automatic gain control in 0.13µm BiCMOS technology for optical fiber coherent receivers., , , , , , and . ISSCC, page 406-407. IEEE, (2016)100 Gb/s Differential Linear TIAs With Less Than 10 pA/√Hz in 130-nm SiGe: C BiCMOS., , , , , and . IEEE J. Solid State Circuits, 53 (2): 458-469 (2018)A new figure-of-merit for CML gate delay estimation., , , , and . WiSNet, page 73-76. IEEE, (2018)A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology., , , , , , , , and . ESSCIRC, page 487-490. IEEE, (2016)DAC-free ultra-low-power dual-polarization 64-QAM transmission with InP IQ segmented MZM module., , , , , , , , , and 4 other author(s). OFC, page 1-3. IEEE, (2016)Characterization of liquid crystal polymer from 110 GHz to 170 GHz., , , and . RWS, page 157-159. IEEE, (2014)High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology., , , , and . RWS, page 162-164. IEEE, (2015)Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate., , , , , , and . IEEE J. Solid State Circuits, 53 (9): 2532-2542 (2018)A 94-GHz five-port reflectometer for measuring complex reflection coefficient using 0.13-μm SiGe HBT detectors., , , , , and . WiSNet, page 77-79. IEEE, (2018)