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Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.

, , , , , , , , and . Microelectron. Reliab., 53 (5): 665-669 (2013)

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Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 6 (2): 173-184 (1987)Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress., , , and . Microelectron. Reliab., 45 (9-11): 1365-1369 (2005)Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack., , , , , , , and . Microelectron. Reliab., 48 (11-12): 1769-1771 (2008)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)CMOS/BiCMOS Technology., , , , , , , , , and 2 other author(s). The VLSI Handbook, CRC Press, (1999)Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions., , , , , , , , and . Microelectron. Reliab., 53 (5): 665-669 (2013)Si nanowire FET and its modeling., , , , , , , , and . Sci. China Inf. Sci., 54 (5): 1004-1011 (2011)Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing., , , , , , , and . Microelectron. Reliab., (2018)Trend of CMOS downsizing and its reliability., and . Microelectron. Reliab., 42 (9-11): 1251-1258 (2002)