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Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , and 9 other author(s). ESSDERC, page 286-289. IEEE, (2012)Analog performance of strained SOI nanowires down to 10K., , , , , , and . ESSDERC, page 222-225. IEEE, (2016)Drain current model for short-channel triple gate junctionless nanowire transistors., , , , , , , and . Microelectron. Reliab., (2016)Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K., , , , , , , and . Microelectron. Reliab., (2017)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)Plasma charging damage mechanisms and impact on new technologies., and . Microelectron. Reliab., 41 (7): 959-965 (2001)Accurate determination of flat band voltage in advanced MOS structure., , and . Microelectron. Reliab., 47 (4-5): 660-664 (2007)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks., , , , , and . Microelectron. Reliab., 47 (4-5): 489-496 (2007)