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Disambiguation of "Mori, Takahiro"

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PBTI for N-type tunnel FinFETs.

, , , , , , , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)

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Ryoko Mori

Takahito Mori

Takahiro Kato

Takahiro Moriyama

Hisako Mori

 

Other publications of authors with the same name

Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion., , and . VISAPP (1), page 221-229. SciTePress, (2012)Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation., , , , , and . VLSI Technology and Circuits, page 334-335. IEEE, (2022)Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance., , , , , , , , , and 1 other author(s). ESSDERC, page 182-185. IEEE, (2014)PBTI for N-type tunnel FinFETs., , , , , , , , , and 4 other author(s). ICICDT, page 1-4. IEEE, (2015)Control moment gyroscope for swing motion control., , , and . ROBIO, page 650-655. IEEE, (2015)Development of constant torque device and its application to power assist systems., , , and . AIM, page 192-197. IEEE, (2014)Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes., , , , , , , , , and 5 other author(s). ESSDERC, page 202-205. IEEE, (2013)Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration., , , , , , , , , and 1 other author(s). ESSDERC, page 278-281. IEEE, (2014)Photometric Linearization by Robust PCA for Shadow and Specular Removal., , , and . VISIGRAPP (Selected Papers), volume 359 of Communications in Computer and Information Science, page 211-224. Springer, (2012)