Author of the publication

A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections.

, , , , , , , , and . VLSI Circuits, page 1-2. IEEE, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A Rapid Prototyping of Real-Time Pattern Generator for Step-and-Scan Lithography Using Digital Micromirror Device., , , , , and . FPT, page 305-308. IEEE, (2007)A robust color signal processing with wide dynamic range WRGB CMOS image sensor., , and . Digital Photography, volume 7876 of SPIE Proceedings, page 78760W. SPIE/IS&T, (2011)High Speed and Narrow-Bandpass Liquid Crystal Filter for Real-Time Multi Spectral Imaging Systems., , , , , , , , , and . IEICE Trans. Electron., 101-C (11): 897-900 (2018)A still image encoder based on adaptive resolution vector quantization employing needless calculation elimination architecture., , , , , , and . ASP-DAC, page 567-568. ACM, (2003)High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage., , , , and . IMSE, page 14-17. Society for Imaging Science and Technology, (2017)A Preliminary Chip Evaluation toward Over 50Mfps Burst Global Shutter Stacked CMOS Image Sensor., , , and . IMSE, page 1-4. Society for Imaging Science and Technology, (2018)Circuit level prediction of device performance degradation due to negative bias temperature stress., , , , , , and . Microelectron. Reliab., 47 (6): 930-936 (2007)Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction., , , , and . Microelectron. Reliab., 47 (2-3): 409-418 (2007)A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor., , , , , and . IEEE J. Solid State Circuits, 41 (4): 851-858 (2006)Si image sensors with wide spectral response and high robustness to ultraviolet light exposure., and . IEICE Electron. Express, 11 (10): 20142004 (2014)