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Compact Hierarchical Bipolar Transistor Modeling With HiCUM, and . International Series on Advances in Solid State Electronics and Technology World Scientific, (2010)3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation., , , , , , , and . IEEE J. Solid State Circuits, 55 (6): 1471-1481 (2020)HICUM/L2: Extensions over the last decade., , , , and . BCICTS, page 1-4. IEEE, (2020)Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz., , , , , , , and . BCICTS, page 145-148. IEEE, (2023)Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs., , , and . BCICTS, page 1-4. IEEE, (2021)Geometry scalable compact modeling of GaAs HBTs., , , and . BCICTS, page 212-215. IEEE, (2022)Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs., , and . ESSDERC, page 90-93. IEEE, (2017)SiGe HBT Technology: Future Trends and TCAD-Based Roadmap., , , , , , , and . Proc. IEEE, 105 (6): 1068-1086 (2017)Mathematical foundation for constructing accurate dynamic bipolar transistor compact models., and . BCICTS, page 1-4. IEEE, (2019)An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs., , , , and . BCICTS, page 1-4. IEEE, (2021)