Author of the publication

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.

, , , and . Microelectron. Reliab., 47 (9-11): 1439-1443 (2007)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Scalable High Voltage CMOS technology for Smart Power and sensor applications., , , , , , , , , and . Elektrotech. Informationstechnik, 125 (4): 109-117 (2008)Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors., , , , , , and . IET Circuits Devices Syst., 2 (3): 347-353 (2008)Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures., , , , and . Microelectron. Reliab., 47 (4-5): 697-699 (2007)Statistical modelling of MOS transistor mismatch for high-voltage CMOS processes, , , and . Quality and Reliability Engineering International, 21 (5): 477--489 (2005)Interface traps density-of-states as a vital component for hot-carrier degradation modeling., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 50 (9-11): 1267-1272 (2010)Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs., , , , , , , , and . Microelectron. Reliab., 55 (9-10): 1427-1432 (2015)An analytical approach for physical modeling of hot-carrier induced degradation., , , , , , , , and . Microelectron. Reliab., 51 (9-11): 1525-1529 (2011)Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor., , , and . Microelectron. Reliab., 47 (9-11): 1439-1443 (2007)