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A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

, , , , , , , , and . Microelectron. Reliab., 48 (11-12): 1759-1764 (2008)

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A novel approach to characterization of progressive breakdown in high-k/metal gate stacks., , , , , , , , and . Microelectron. Reliab., 48 (11-12): 1759-1764 (2008)General features of progressive breakdown in gate oxides: A compact model., , and . IRPS, page 5. IEEE, (2015)Structure of the oxide damage under progressive breakdown., , , , , and . Microelectron. Reliab., 45 (5-6): 845-848 (2005)A dual core low power microcontroller with openMSP430 architecture for high reliability lockstep applications using a 180 nm high voltage technology node., , , , and . LASCAS, page 1-4. IEEE, (2013)Radiation damage characterization of digital integrated circuits., , , , , and . LATW, page 1-5. IEEE, (2009)Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms., , , , , , , , , and 1 other author(s). IRPS, page 1-8. IEEE, (2019)Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks., , , , , and . IRPS, page 3-1. IEEE, (2018)Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity., , , , , , and . IRPS, page 6-1. IEEE, (2018)Radiation effects in nitride read-only memories., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 50 (9-11): 1857-1860 (2010)Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp., , , , , , , and . SBCCI, page 1-5. IEEE, (2018)