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Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis., , , , , and . IRPS, page 11. IEEE, (2015)ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure., , , , , , and . Microelectron. Reliab., 55 (9-10): 1506-1511 (2015)A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance., , , , , and . ICICDT, page 1-4. IEEE, (2012)Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation, , , , , and . Numerical Simulation -- From Theory to Industry, chapter 15, InTech, (September 2012)Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs., , , , and . IRPS, page 2. IEEE, (2015)A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access energy, with bit-interleaved radiation Soft Error tolerance., , , , and . ESSCIRC, page 313-316. IEEE, (2012)Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits., , , , , and . Microelectron. Reliab., 54 (9-10): 2278-2283 (2014)Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test., , , , , , , and . IRPS, page 12. IEEE, (2015)Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs., , , , and . Microelectron. Reliab., (2017)Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 50 (9-11): 1822-1831 (2010)