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A Comprehensive Design Procedure and Performance Evaluation of 200°C Non-Inverting Buck-Boost Converter using SiC MOSFET Bare Dies., , and . IECON, page 1-6. IEEE, (2021)Self-Consistent Solution of the Multi Band Boltzmann, Poisson and Hole-Continuity Equations., , and . VLSI Design, 6 (1-4): 257-260 (1998)New "Irreducible Wedge" for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations., and . VLSI Design, 8 (1-4): 413-417 (1998)Reliability Testing of SiC MOS Devices at 500°C., , , , , and . IRPS, page 1-4. IEEE, (2019)An Antenna Co-Design Dual Band RF Energy Harvester., , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 60-I (12): 3256-3266 (2013)Nonlinear behavior of electrostatic discharge protection structures under high-power microwave excitation: Modeling and simulation., , , , and . ISCAS, page 1840-1843. IEEE, (2011)Spherical Harmonic Modeling of a 0.05 μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis., , , and . VLSI Design, 8 (1-4): 147-151 (1998)Three-Dimensional Hydrodynamic Modeling of MOSFET Devices., , and . VLSI Design, 6 (1-4): 261-265 (1998)Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach., , , and . VLSI Design, 6 (1-4): 191-195 (1998)The effects of radiation on the terrestrial operation of SiC MOSFETs., , , , , , and . IRPS, page 2. IEEE, (2018)