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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

P. Sharma, S. Tyaginov, S. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, and T. Grasser. ESSDERC, page 428-431. IEEE, (2016)

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Stanislav Laznicka

Stanislav Novak

Stanislav Nastassine

Stanislav Mráz

Stanislav Keranov

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On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.S. Tyaginov, A. Afzalian, A. Makarov, A. Grill, M. Vandemaele, M. Cherenev, M. Vexler, G. Hellings, and B. Kaczer. IRPS, page 11. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.J. Bastos, B. O'Sullivan, J. Franco, S. Tyaginov, B. Truijen, A. Chasin, R. Degraeve, B. Kaczer, R. Ritzenthaler, E. Capogreco and 7 other author(s). IRPS, page 1-6. IEEE, (2022)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.A. Makarov, B. Kaczer, P. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A. El-Sayed, T. Grasser, D. Linten and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.M. Vandemaele, B. Kaczer, S. Tyaginov, E. Bury, A. Chasin, J. Franco, A. Makarov, H. Mertens, G. Hellings, and G. Groeseneken. IRPS, page 6. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.A. Grill, V. John, J. Michl, A. Beckers, E. Bury, S. Tyaginov, B. Parvais, A. Chasin, T. Grasser, M. Waltl and 2 other author(s). IRPS, page 10. IEEE, (2022)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.A. Makarov, D. Linten, S. Tyaginov, B. Kaczer, P. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A. El-Sayed, M. Jech and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.E. Bury, A. Chasin, B. Kaczer, M. Vandemaele, S. Tyaginov, J. Franco, R. Ritzenthaler, H. Mertens, P. Weckx, N. Horiguchi and 1 other author(s). IRPS, page 5. IEEE, (2022)Origins and implications of increased channel hot carrier variability in nFinFETs.B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. Procel, L. Trojman and 11 other author(s). IRPS, page 3. IEEE, (2015)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.M. Vandemaele, B. Kaczer, S. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, and G. Groeseneken. IRPS, page 1-7. IEEE, (2019)Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, and I. Radu. IRPS, page 1-6. IEEE, (2020)

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Disambiguation of "Tyaginov, Stanislav"

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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

Please choose a person to relate this publication to

Stanislav Laznicka

Stanislav Novak

Stanislav Nastassine

Stanislav Mráz

Stanislav Keranov

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Tyaginov, Stanislav"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

Please choose a person to relate this publication to

Stanislav Laznicka

Stanislav Novak

Stanislav Nastassine

Stanislav Mráz

Stanislav Keranov

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.