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Low-noise and large-area CMOS SPADs with timing response free from slow tails., , , , , , , , , and 1 other author(s). ESSDERC, page 230-233. IEEE, (2012)Highly sensitive UV-enhanced linear CMOS photosensor., , , and . ESSCIRC, page 118-121. IEEE, (2008)Double modified internal gate (MIG) pixel for fluorescence imaging applications., , , , and . ECCTD, page 9-12. IEEE, (2009)Time-of-Flight 3-D Imaging Pixel Structures in Standard CMOS Processes., , , and . IEEE J. Solid State Circuits, 43 (7): 1594-1602 (2008)Charge-injection photogate pixel fabricated in CMOS silicon-on-insulator technology., , and . Int. J. Circuit Theory Appl., 37 (2): 179-192 (2009)CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels., , , , , , , and . ESSCIRC, page 111-114. IEEE, (2011)Large full-well capacity stitched CMOS image sensor for high temperature applications., , , , and . ESSCIRC, page 130-133. IEEE, (2010)SOI pixel detector based on CMOS time-compression charge-injection., , and . ECCTD, page 946-949. IEEE, (2007)Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors., , , , , and . ESSCIRC, page 200-203. IEEE, (2009)