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Disambiguation of "Kang, In Man"

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InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system.

, , , , and . ICOIN, page 436-438. IEEE Computer Society, (2016)

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Man-Ok Kang

In-Won Kang

In-Soon Kang

Georg Man

Man Guo

 

Other publications of authors with the same name

Employing Genetic Algorithm as an Efficient Alternative to Parameter Sweep Based Multi-Layer Thickness Optimization in Solar Cells., , , , , , , , , and . CoRR, (2019)Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems., , , , and . ICOIN, page 442-444. IEEE Computer Society, (2016)Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance., , , , and . IEEE Access, (2020)InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system., , , , and . ICOIN, page 436-438. IEEE Computer Society, (2016)RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems., , , , and . ICOIN, page 519-520. IEEE Computer Society, (2015)Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure., , , , , , , , , and 2 other author(s). IEEE Access, (2021)Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach., , , , , , , and . IEEE Access, (2020)Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer., and . IEICE Trans. Electron., 95-C (5): 814-819 (2012)Novel AlGaN/GaN omega-FinFETs with excellent device performances., , , , , , , , and . ESSDERC, page 323-326. IEEE, (2016)Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution., , , , , , , , and . ESSDERC, page 130-133. IEEE, (2015)