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Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit. The Journal of Physical Chemistry C, 123 (31): 18854--18860 (July 2019)Zinc-Blende (cubic) GaN/InGaN optoelectronic device strctures on (001) free-standing substrates both grown by molecular beam epitaxy, , , , , and . Book of Abstracts of the 8th International Conference on Nitride Semiconductors (ICNS-8), page 494--495. (2009)Program auto parallelizer and vectorizer implemented on the basis of the universal translation library and LLVM technology., , , , and . Program. Comput. Softw., 40 (3): 128-138 (2014)Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates., , , , , , , , , and 3 other author(s). Microelectron. J., 40 (3): 537-539 (2009)Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape. The Journal of Physical Chemistry C, 122 (40): 22856--22863 (September 2018)Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates, , , , , and . J. Vac. Sci. Technol. B, 28 (3): C3B1 (2010)A program auto-parallelizer based on the component technology of optimizing compiler construction., and . Program. Comput. Softw., 35 (6): 321-339 (2009)Growth and characterization of free-standing zinc-blende GaN layers and substrates, , and . physica status solidi (a), 207 (6): 1277--1282 (2010)