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Defects in III-V semiconductor surfaces
Ph.
Ebert
Applied Physics A: Materials Science \& Processing
xx2004.
10.1007/s003390101059 .
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(110)
by
arrich
on Feb 14, 2008, 2:23 AM
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Theoretical Scanning Tunneling Microscopy Images of the As Vacancy on the GaAs(110) Surface
Hanchul
Kim
and James
Chelikowsky
Physical Review Letters
xx1996.
10.1103/physrevlett.77.1063 .
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on Feb 14, 2008, 2:23 AM
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Charge Injection and STM-Induced Vacancy Migration on GaAs(110)
G.
Lengel
and J.
Harper
and M.
Weimer
Phys. Rev. Lett.
76(25):4725--4728
Jun1996.
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anion_vacancy
migration
GaAs
(110)
STM
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arrich
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on Feb 13, 2008, 11:41 PM
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GaAs
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STM
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anion_vacancy
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migration
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(110)
DX
Dietl
EL2
Flatte
GaAs
GaMnAs
GaMnN
Grandidier
III-V
Mn
Ohno
RKKY
STM
adatom
ahmacdonald
anion
anion_vacancy
antisite
arsenic
awschalom
center
conduction
dopant
high\_Tc
hopping
migration
p-type
rebuttal
vacancy
wavefunction